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IMAGE SENSOR
CCD area image sensor
S7847 series
High IR sensitivity, four-stage TE-cooled, front-illuminated FFT-CCDs
S7847 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7847 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S7847 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S7847 series also features low noise and low dark signal (MPP mode operation). These enable low-light-level detection and long integration time, thus achieving a wide dynamic range. S7847 series has a pixel size of 24 x 24 m and is available in active area of 24.576 (H) x 2.976 (V) and 24.576 (H) x 6.048 (V) mm. A four-stage Peltier element is built into the same package for thermoelectric cooling. At room temperature operation, the device can be cooled down to -70 C with using forced air cooling. In addition, since both the CCD chip and Peltier element are hermetically sealed, no dry air is required, thus allowing easy handling.
Features
Applications
l 1024 (H) x 124 (V) and 1024 (H) x 252 (V) pixel format l Pixel size: 24 x 24 m l 100 % fill factor l Wide dynamic range l Low dark current l Low readout noise l MPP operation l Four-stage TE-cooled l High IR response
s Selection and order guide
Type No. Cooling
l Astronomy l Scientific measuring instrument l Fluorescence spectrometer l Raman spectrophotometer l Optical and spectrophotometric analyzer l For low-light-level detection requiring
Number of total pixels
Number of active pixels
S7847-1007 1044 x 128 1024 x 124 Four-stage TE-cooled S7847-1008 1044 x 256 1024 x 252 S7847 series has a hermetically-sealed package with AR-coated sapphire window.
Active area [mm (H) x mm (V)] 24.576 x 2.976 24.576 x 6.048
s General ratings
Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Specification Full frame transfer 100 % S7847-1007 : 1024(H) x 124 (V) S7847-1008 : 1024(H) x 252 (V) 24 (H) x 24 (V) m S7847-1007: 24.576 (H) x 2.976 (V) mm S7847-1008: 24.576 (H) x 6.048 (V) mm 2 phase 2 phase One-stage MOSFET source follower 28 pin metal package AR coated sapphire
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -100 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. -
S7847 series
Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Remark Min. 18 11.5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 20 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 22 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V V V V V V V V V V
s Electrical characteristics (Ta=25 C)
Parameter Signal output frequency Reset clock frequency S7847-1007 Vertical shift register capacitance S7847-1008 Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Transfer efficiency DC output level Output impedance Symbol fc frg CP1V, CP2V CP1H, CP2H CSG CRG CTG CTE Vout Remark *1 *2 *2 Min. 0.99995 12 Typ. 80 80 3,200 6,400 300 7 7 150 0.99999 15 3 15 Max. 2,000 2,000 18 Unit kHz kHz pF pF pF pF pF V k mW
Zo *2, *3 Power dissipation P *1: Charge transfer efficiency per pixel, measured at half of the full well capacity. *2: VOD=20 V, Load resistance =22 k *3: Power dissipation of the on-chip amplifier.
2
CCD area image sensor
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
Parameter Saturation output voltage Vertical Full well capacity Horizontal CCD conversion efficiency +25 C Dark current 0 C (MPP mode) -70 C Readout noise Line binning Dynamic range Area scanning Spectral response range Photo response non-uniformity Point defects Blemish Cluster defects Symbol Vsat Fw Sv DS Nr DR PRNU Remark *4 *5 *6 *7 *8 *9 *10 *11 *12 Min. 150 300 1.8 25,000 12,500 Typ. Fw x Sv 300 600 2.2 4,000 200 0.0015 6 75,000 37,500 400 to 1,100 -
S7847 series
Max. 30,000 1,500 0.1 12 10 0 0 Unit V keV/ee-/pixel/s e-rms nm %
Column defects 0 *4: Large horizontal full well for line binning operation. *5: VOD =20 V , Load resistance =22 k *6: Dark current nearly doubles for every 5 to7 C increase in temperature. *7: -40 C, operating frequency is 80 kHz *8: DR = Fw / Nr *9: Measured at half of the full well capacity. PRNU (%) = noise / signal x 100, noise : fixed pattern noise (peak to peak) *10: White spots > 3 % of full well at 0 C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent pixels *11: continuous 2 to 9 point defects *12: continuous > 10 point defects
s Pin connections
Pin no. Symbol Description 1 PTE-cooler2 NC 3 SS Substrate (GND) 4 NC 5 ISV Test point (vertical input source) 6 IG2V Test point (vertical input gate-2) 7 IG1V Test point (vertical input gate-1) 8 RG Reset gate 9 RD Reset drain 10 OS Output transistor source 11 OD Output transistor drain 12 OG Output gate 13 SG Summing gate 14 P+ TE-cooler+ 15 TSH1 Temperature sensor (hot side) 16 TSC1 Temperature sensor (cool side) 17 TSC2 Temperature sensor (cool side) 18 P2H CCD horizontal register clock-2 19 P1H CCD horizontal register clock-1 20 IG2H Test point (horizontal Input gate-2) 21 IG1H Test point (horizontal Input gate-1) 22 ISH Test point (horizontal Input source) 23 P2V CCD vertical register clock-2 24 P1V CCD vertical register clock-1 25 TG Transfer gate 26 NC 27 NC 28 TSH2 Temperature sensor (hot side) *13: TG is an isolation gate between vertical register and horizontal resister. In standard operation, the same pulse of P2V should be applied to the TG. Remark
Shorted to RD Shorted to 0 V Shorted to 0 V
Same timing as P2H
Shorted to 0 V Shorted to 0 V Shorted to RD
Same timing as P2 V *13
3
CCD area image sensor
s Spectral response without window
S7847 series
s Spectral transmittance characteristic of window material
100 (Typ. Ta=25 C)
50
(Typ. Ta = 25 C) S7847 SERIES
QUANTUM EFFICIENCY (%)
40
TRANSMITTANCE (%)
95 AR COATED SAPPHIRE
30
90
20
85
10
S7017 SERIES
0 400
500
600
700
800
900
1000 1100 1200
80 400
500
600
700
800
900
1000 1100 1200
WAVELENGTH (nm)
KMPDB0104EA
WAVELENGTH (nm)
KMPDB0106EA
s Dimensional outline (unit: mm)
a 20.0 PIN No. 1 1st PIN INDEX MARK 28
2 3 27 26
0.46
1.0
4.0
7.0
12 13
17 16
14
15
35.0 47.0
PINCHED OFF TUBE
5.0
AR-COATED SAPPHIRE WINDOW
18.5 0.5
6.4 0.5
TYPE No.
ACTIVE AREA a b 2.976 (V) 6.048 (V)
S7847-1007 24.576 (H) 0.25 50.8 S7847-1008 24.576 (H)
2.54
27.94
KMPDA0099EA
36.0
44.0
4
50.0
b
CCD area image sensor
sDevice structure, line output format
IG1V IG2V ISV 7 5 6 SS 3 TG 25 P1V 24
S7847 series
P2V 23
V
......
V=124, 252 H=1024 ...... H
1 RG RD 8 9
......
S1023 S1024 D11 D12 D13 D14 D15 D16 D17 D18 D19 D20
D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 S1 S2
22 ISH 21 IG1H
OS 10
11 OD
12 OG
13 SG 4 BLANK
2 ISOLATOIN 4 OPTICAL BLACK
18 19 20 IG2H 1024 2 ISOLATOIN P2H P1H 4 OPTICAL SIGNAL OUT 4 BLANK BLACK
Pixel format
Blank 4 Optical Black 4 Left Horizontal Direction Right Isolation Effective Isolation 2 1024 2 Top Vertical Direction Bottom Isolation Effective Isolation 2 124 or 252 2 Optical Black 4
KMPDC0085EA
Blank 4
s Timing chart q Area scanning 1 (low dark current mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 READOUT PERIOD (Shutter must be closed) 4..127 128124+4 (ISOLATION) : S7847-1007 4..255 256252+4 (ISOLATION) : S7847-1008
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20
KMPDC0088EA
5
CCD area image sensor
Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *15: In case of S7847-1007. Remark *14 *14 Min. 6 *15 200 250 10 250 10 100 5 3
S7847 series
Typ. 50 50 Max. Unit s ns ns ns % ns ns % ns ns s
-
q Area scanning 2 (large full well mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3
READOUT PERIOD (Shutter must be closed) 4..127 128124+4 (ISOLATION) : S7847-1007 4..255 256252+4 (ISOLATION) : S7847-1008
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20
KMPDC0103EA
Parameter Symbol Remark Pulse width Tpwv *16 P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *16 P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *17: In case of S7847-1007.
Min. 6 *17 200 250 10 250 10 100 5 3
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
6
CCD area image sensor
q Line binning
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG Tpwr RG OS D1 2 VERTICAL BINNING PERIOD (Shutter must be closed) 3..126 3..254 127 255
S7847 series
READOUT PERIOD (Shutter must be closed)
128 124+4 (ISOLATION): S7847-1007 256 252+4 (ISOLATION): S7847-1008 Tovr Tpwh, Tpws 1 2 3
4..1042 1043 1044
D2 D19 D3..D10, S1..S1024, D11..D18
D20
KMPDC0089EA
Parameter Symbol Remark Pulse width Tpwv *18 P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *18 P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. *19: In case of S7847-1007.
Min. 6 *19 200 250 10 250 10 100 5 3
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
s Specifications of built-in TE-cooler
Parameter Internal resistance Maximum current *20 Symbol Rint Imax Condition Ta=27 C Th *21=27 C T *22=Tmax Th*21=27 C Maximum voltage Maximum heat absorption *23 Vmax T=Tmax I=Imax Tc *24=Th *21=27 C I=Imax 7.4 V Min. Typ. 1.6 Max. 4.4 Unit A
Qmax
-
-
3.0
W
Maximum temperature at hot side 50 C CCD temperature Ta=25 C -70 -50 C *20: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation, the supply current should be less than 60 % of this maximum current. *21: Temperature at hot side of thermoelectric cooler. *22: T=Th - Tc *23: This is a theoretical heat absorption level that offsets the temperature difference in the Peltier element when the maximum current is supplied to the unit. *24: Temperature at cool side of thermoelectric cooler.
7
CCD area image sensor
6 V-I CCD TEMPERATURE - I (Typ. Ta=25 C) 40
S7847 series
5
20
VOLTAGE (V)
4
0
3
-20
2
-40
1
-60
0 0 0.5 1.0 1.5 2.0 2.5
-80 3.0
CURRENT (A)
KMPDB0107EA
s Specifications of built-in temperature sensors
Parameter Resistance at cool side Temperature coefficient of resistance at cool side Resistance at hot side Temperature coefficient of resistance at hot side
1400 1200 1000 800 600 400 200 0 -100 (Typ. Ta=25 C)
CCD TEMPERATURE (C)
Symbol Rc Rh -
Condition T=0 C T=0 C -
Min. -
Typ. 1,000 0.00375 1,000 0.00385
Max. -
Unit / /
RESISTANCE ()
-80
-60
-40
-20
0
20
40
TEMPERATURE (C)
KMPDB0108EA
s Precaution for use (electrostatic countermeasures)
q Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. q Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. q Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
s Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
8
Cat. No. KMPD1031E06 Apr. 2005 DN

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